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In this paper, we describe the design and characterization of 400-nm-long (88periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited onself-assembled GaN nanowires for application in electron-pumped ultravioletsources. The optical performance of GaN/AlN superlattices on nanowires iscompared with the emission of planar GaN/AlN superlattices with the sameperiodicity and thickness grown on bulk GaN substrates along the N-polar andmetal-polar crystallographic axes. The nanowire samples are less sensitive tononradiative recombination than planar layers, attaining internal quantumefficiencies (IQE) in excess of 60% at room temperature even under lowinjection conditions. The IQE remains stable for higher excitation powerdensities, up to 50 kW/cm2. We demonstrate that the nanowire superlattice islong enough to collect the electron-hole pairs generated by an electron beamwith an acceleration voltage VA = 5 kV. At such VA, the light emitted from thenanowire ensemble does not show any sign of quenching under constant electronbeam excitation (tested for an excitation power density around 8 kW/cm2 overthe scale of minutes). Varying the dot/barrier thickness ratio and the Alcontent in the dots, the nanowire peak emission can be tuned in the range from340 to 258 nm. Keywords: GaN, AlN, nanowire, ultraviolet

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources