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The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failedafter three months of high temperature reverse bias (HTRB) stress. A localinspection of the failed devices demonstrated the presence of a threadingdislocation (TD) at the breakdown location. The nanoscale origin of thedielectric breakdown was highlighted with advanced high-spatial-resolutionscanning probe microscopy (SPM) techniques. In particular, SPM revealed theconductive nature of the TD and a local increase of the minority carrierconcentration close to the defect. Numerical simulations estimated a holeconcentration 13 orders of magnitude larger than in the ideal 4H-SiC crystal.The hole injection in specific regions of the device explained the failure ofthe gate oxide under stress. In this way, the key role of the TD in thedielectric breakdown of 4H-SiC MOSFET was unambiguously demonstrated.

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress