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We demonstrate a fabrication scheme for clean suspended structures usingchemical-vapor-deposition-grown graphene and a dry transfer method onlift-off-resist-coated substrates to facilitate suspended graphenenanoelectronic devices for technology applications. It encompasses the demandsfor scalable fabrication as well as for ultra-fast response due to weakcoupling to environment. The fabricated devices exhibited initially a weakfield-effect response with substantial positive ($p$) doping which transformedinto weak negative ($n$) doping upon current annealing at the temperature of 4Kelvin. With increased annealing current, $n$-doping gradually decreased whilethe Dirac peak position approached zero in gate voltage. An ultra-low residualcharge density of $9\times10^8 \mathrm{ \ cm^{-2}}$ and a mobility of $1.9\times 10^5 \mathrm{\ cm^2/Vs}$ were observed. Our samples display clearFabry-P\'{e}rot (FP) conductance oscillation which indicates ballistic electrontransport. The spacing of the FP oscillations are found to depend on the chargedensity in a manner that agrees with theoretical modeling based on Kleintunneling of Dirac particles. The ultra-low residual charge, the FPoscillations with density dependent period, and the high mobility proveexcellent quality of our suspended graphene devices. Owing to its simplicity,scalability and robustness, this fabrication scheme enhances possibilities forproduction of suspended, high-quality, two-dimensional-material structures fornovel electronic applications.

Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-P\'{e}rot interference