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We introduce a fabrication method for gate-all-around nanowire field-effecttransistors. Single nanowires were aligned perpendicular to underlying bottomgates using a resist-trench alignment technique. Top gates were then definedaligned to the bottom gates to form gate-all-around structures. This approachovercomes significant limitations in minimal obtainable gate length andgate-length control in previous horizontal wrap-gated nanowire transistors thatarise because the gate is defined by wet etching. In the method presented heregate-length control is limited by the resolution of theelectron-beam-lithography process. We demonstrate the versatility of ourapproach by fabricating a device with an independent bottom gate, top gate, andgate-all-around structure as well as a device with three independentgate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Ourmethod enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 Kfor a 150 nm gate length.

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors