English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Semiconductor fabrication is a mainstay of modern civilization, enabling themyriad applications and technologies that underpin everyday life. However,while sub-10 nanometer devices are already entering the mainstream, the end ofthe Moore's Law roadmap still lacks tools capable of bulk semiconductorfabrication on sub-nanometer and atomic levels, with probe-based manipulationbeing explored as the only known pathway. Here we demonstrate that theatomic-sized focused beam of a scanning transmission electron microscope can beused to manipulate semiconductors such as Si on the atomic level, inducinggrowth of crystalline Si from the amorphous phase, reentrant amorphization,milling, and dopant-front motion. These phenomena are visualized in real timewith atomic resolution. We further implement active feedback control based onreal-time image analytics to control the e-beam motion, enabling shape controland providing a pathway for atom-by-atom correction of fabricated structures inthe near future. These observations open a new epoch for atom-by-atommanufacturing in bulk, the long-held dream of nanotechnology.

Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback