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We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAsnanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, andN$_2$ bubbled through liquid H$_2$O and alcohols to identify whetherphase-related structural/surface differences affect their response. Both WZ andZB give poor gate characteristics in dry state. Adsorption of polar speciesreduces off-current by 2-3 orders of magnitude, increases on-off ratio andsignificantly reduces sub-threshold slope. The key difference is the greatersensitivity of WZ to low adsorbate level. We attribute this to facet structureand its influence on the separation between conduction electrons and surfaceadsorption sites. We highlight the important role adsorbed species play innanowire device characterisation. WZ is commonly thought superior to ZB in InAsnanowire transistors. We show this is an artefact of the moderate humidityfound in ambient laboratory conditions: WZ and ZB perform equally poorly in thedry gas limit yet equally well in the wet gas limit. We also highlight thevital role density-lowering disorder has in improving gate characteristics, beit stacking faults in mixed-phase WZ or surface adsorbates in pure-phasenanowires.

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors