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We present a systematic study of the influence of elastic strain relaxationon the built-in electrostatic potentials and the electronic properties of axial(In,Ga)N/GaN nanowire heterostructures. We employ and evaluate analytical andnumerical approaches to compute strain and polarization potentials. These twoingredients then enter an eight-band k.p model to compute electron and holeground states and energies. Our analysis reveals that for a sufficiently largeratio between the thickness of the (In,Ga)N disk and the diameter of thenanowire, the elastic relaxation leads to a significant reduction of thebuilt-in electrostatic potential in comparison to a planar system of similarlayer thickness and In content. However, a complete elimination of the built-inpotential cannot be achieved in axial nanowire heterostructures. Nevertheless,the reduction of the built-in electrostatic potential leads to a significantmodification of the electron and hole energies. Our findings indicate that therange of accessible ground state transition energies in an axial (In,Ga)N/GaNnanowire heterostructure is limited due to the reduced influence ofpolarization potentials for thicker disks. Additionally, we find that strainand polarization potentials induce complex confinement features of electronsand holes, which depend on the In content, shape, and dimensions of theheterostructure.

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties