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Here we demonstrate the controlled growth of Bi(110) and Bi(111) films on an(insulating) $\alpha$-Al$_2$O$_3$(0001) substrate by surface X-ray diffractionand X-ray reflectivity using synchrotron radiation. At temperatures as low as40 K, unanticipated pseudo-cubic Bi(110) films are grown having a thicknessranging from a few to tens of nanometers. The roughness at the film-vacuum aswell as at the film-substrate interface, can be reduced by mild heating, wherea crystallographic orientation transition of Bi(110) towards Bi(111) isobserved at 400 K. From 450 K onwards high quality and ultrasmooth Bi(111)films are formed. Growth around the transition temperature results in thegrowth of competing Bi(110) and Bi(111) thin film domains.

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate