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Ferromagnetic insulators (FM-Is) are the materials of interest for newgeneration quantum electronic applications. Here, we have investigated thephysical observables depicting FM-I ground states in epitaxial Sm$ _{2} $NiMnO$_{6} $ (SNMO) double perovskite thin films fabricated under differentconditions to realize different level of Ni/Mn anti-site disorders (ASDs). Thepresence of ASDs immensely influence the characteristic magnetic and anisotropybehaviors in SNMO system by introducing short scale antiferromagneticinteractions in predominant long range FM ordered host matrix. Chargedisproportion between cation sites in form of $ Ni^{2+}+Mn^{4+} \longrightarrowNi^{3+}+Mn^{3+} $, causes mixed valency in both Ni and Mn species, which isfound insensitive to ASD concentrations. Temperature dependent photo emission,photo absorption measurements duly combined with cluster model configurationinteraction simulations, suggest that the eigenstates of Ni and Mn cations canbe satisfactorily described as a linear combination of the unscreened $ d^{n} $and screened $ d^{n+1} \underline{L} $ ($ \underline{L} $: O 2\textit{p} hole)states. The electronic structure across the Fermi level (E$ _{F} $) exhibitsclosely spaced Ni $ 3d $, Mn $ 3d $ and O $ 2p $ states. From occupied andunoccupied bands, estimated values of the Coulomb repulsion energy ($ U $) andligand to metal charge transfer energy ($ \Delta $), indicate charge transferinsulating nature, where remarkable modification in Ni/Mn $ 3d $ - O $ 2p $hybridization takes place across the FM transition temperature. Existence ofASD broadens the Ni, Mn $ 3d $ spectral features, whereas spectral positionsare found to be unaltered. Hereby, present work demonstrates SNMO thin film asa FM-I system, where FM state can be tuned by manipulating ASD in the crystalstructure, while I state remains intact.

Robust electronic and tunable magnetic states in Sm$ _{2} $NiMnO$ _{6} $ ferromagnetic insulator