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Chalcogen vacancies in transition metal dichalcogenides are widelyacknowledged as both donor dopants and as a source of disorder. The electronicstructure of sulphur vacancies in MoS2 however is still controversial, withdiscrepancies in the literature pertaining to the origin of the in-gap featuresobserved via scanning tunneling spectroscopy (STS) on single sulphur vacancies.Here we use a combination of scanning tunnelling microscopy (STM) and STS tostudy embedded sulphur vacancies in bulk MoS2 crystals. We observespectroscopic features dispersing in real space and in energy, which weinterpret as tip position- and bias-dependent ionization of the sulphur vacancydonor due to tip induced band bending (TIBB). The observations indicate thatcare must be taken in interpreting defect spectra as reflecting in-gap densityof states, and may explain discrepancies in the literature.

Defects, band bending and ionization rings in MoS2