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Binary III-N nitride semiconductors with wurtzite crystal structure such asGaN and AlN have been long used in many practical applications ranging fromoptoelectronic to telecommunication. The structurally related ZnGeN2 or ZnSnN2derived from the parent binary compounds by cation mutation (elementalsubstitution) have recently attracted attention, but such ternary nitridematerials are mostly limited to II-IV-N2 compositions. This paper reports onsynthesis and characterization of zinc niobium nitride Zn2NbN3 - a previouslyunreported II2-V-N3 ternary nitride semiconductor. The Zn2NbN3 thin films aresynthesized using a single-step adsorption-controlled growth, and a two-stepdeposition/annealing method that prevents loss of Zn and N. Measurementsindicate that Zn2NbN3 crystalizes in wurtzite-derived structure, in contrast tochemically related rocksalt-derived Mg2NbN3 compound synthesized here forcomparison using the two-step method. The estimated wurtzite lattice parametersare a = 3.36A and c = 5.26A, (c/a = 1.55), and the optical absorption onset isat 2.1 eV for this cation-disordered Zn2NbN3. For comparison, publishedcomputational studies predict cation-ordered Zn2NbN3 to be a semiconductor witheffective wurtzite c/a = 1.62 and a band gap of 3.5 - 3.6 eV. Overall, thiswork expands the wurtzite family of nitride semiconductors, and suggests thatother ternary nitrides should be possible to synthesize

Synthesis of Zn2NbN3 ternary nitride semiconductor with wurtzite-derived crystal structure