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In this paper, the electrical and spin properties of mono- and bilayer HfSSein the presence of a vertical electric field are studied. The densityfunctional theory is used to investigate their properties. Fifteen differentstacking orders of bilayer HfSSe are considered. The mono- and bilayerdemonstrate an indirect bandgap, whereas the bandgap of bilayer can beeffectively controlled by electric field. While the bandgap of bilayer closesat large electric fields and a semiconductor to metal transition occurs, theeffect of a normal electric field on the bandgap of the monolayer HfSSe isquite weak. Spin-orbit coupling causes band splitting in the valence band andRashba spin splitting in the conduction band of both mono- and bilayerstructures. The band splitting in the valence band of the bilayer is smallerthan a monolayer, however, the vertical electric field increases the bandsplitting in bilayer one. The stacking configurations without mirror symmetryexhibit Rashba spin splitting which is enhanced with the electric field.

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field