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We successfully grew single crystals of Si- and Ge-square-net compounds ofNbSiSb and NbGeSb whose excellent crystalline quality are verified usingsingle-crystal x-ray diffraction, rocking curves, scanning and transmissionelectron microscopies. Since these two compounds share major crystallographicsimilarity with the topological nodal-line semimetals of ZrSiS family, weemploy density functional theory (DFT) calculations and magnetotransportmeasurements to demonstrate their band structures as well as the electronscattering mechanisms. DFT calculations show that the fermiology shows stronganisotropy from the crystallographic c-axis to the ab-plane and weak anisotropywithin the ab plane, which is consistent with the strong anisotropicmagnetotransport behaviors. Following the Kohler's scaling rule we prove thatsimilar interband and intraband electron-phonon scattering mechanisms work inboth the NbSiSb and NbGeSb compounds. The study of electronic transportmechanism in the presence of external magnetic field renders deep insight intotopological behavior together with it's Fermi surface, and the high similarityof crystallography and strong difference in band structures between the presentsingle crystals and that of ZrSiS family provides the possibility to tune theband structure via element doping

Magnetotransport Properties of Square-Net Compounds of NbSiSb and NbGeSb Single Crystals