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In quantum technologies, point defects in semiconductors are becoming moresignificant. Understanding the frequency, intensity, and polarization of thezero phonon line is important. The last two properties are the subject of thispaper. I present a method for calculating these properties and show theimportance of using wave functions from both the ground and excited state. Thevalidity of this method is demonstrated on the divacancy in 4H-SiC. Here, thecalculated polarization and lifetimes are in excellent agreement withexperimental measurements. In general, this method can help to identify pointdefects and estimate suitable applications.

Theoretical polarization of zero phonon lines in point defects