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We report the anisotropic magnetic properties of the ternary compoundErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperaturesolution growth technique,using Al:Ge eutectic composition as flux. From thepowder x-ray diffraction we confirmed that ErAl$_2$Ge$_2$ crystallizes in thetrigonal CaAl$_2$Si$_2$-type crystal structure. The anisotropic magneticproperties of a single crystal were investigated by measuring the magneticsusceptibility, magnetization, heat capacity and electrical resistivity. A bulkmagnetic ordering occurs around 4 K inferred from the magnetic susceptibilityand the heat capacity. The magnetization measured along the $ab$-planeincreases more rapidly than along the $c$-axis suggesting the basal $ab$-planeas the easy plane of magnetization. The magnetic susceptibility, magnetizationand the $4f$-derived part of the heat capacity in the paramagnetic regimeanalysed based on the point charge model of the crystalline electric field(CEF) indicate a relatively low CEF energy level splitting.

Anisotropic magnetic properties of trigonal ErAl$_2$Ge$_2$ single crystal