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Due to potential applications in nano- and opto-electronics, two-dimensional(2D) materials have attracted tremendous interest. Their thermal transportproperties are closely related to the performance of 2D materials-baseddevices. Here, the phonon transports of monolayer GeC with a perfect planarhexagonal honeycomb structure are investigated by solving the linearized phononBoltzmann equation within the single-mode relaxation time approximation (RTA).Without inclusion of Born effective charges ($Z^*$) and dielectric constants($\varepsilon$), the lattice thermal conductivity ($\kappa_L$) almost decreaseslinearly above 350 K, deviating from the usual $\kappa_L$$\sim$$1/T$ law. Theunderlying mechanism is because the contribution to $\kappa_L$ fromhigh-frequency optical phonon modes increases with increasing temperature, andthe contribution exceeds one from acoustic branches at high temperature. Thesecan be understood by huge phonon band gap caused by large difference in atommass between Ge and C atoms, which produces important effects on scatteringprocess involving high-frequency optical phonon. When considering $Z^*$ and$\varepsilon$, the phonon group velocities and phonon lifetimes ofhigh-frequency optical phonon modes are obviously reduced with respect to oneswithout $Z^*$ and $\varepsilon$. The reduced group velocities and phononlifetimes give rise to small contribution to $\kappa_L$ from high-frequencyoptical phonon modes, which produces the the traditional $\kappa_L$$\sim$$1/T$relation in monolayer GeC. Calculated results show that the isotope scatteringcan also reduce anomalous temperature dependence of $\kappa_L$ in monolayerGeC. Our works highlight the importance of $Z^*$ and $\varepsilon$ toinvestigate phonon transports of monolayer GeC.

Born effective charge removed anomalous temperature dependence of lattice thermal conductivity in monolayer GeC