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These compounds have long been known as promising thermoelectric materials.Recently it was revealed, that they also have unconventional electronictopology. This renewed interest to the investigation of their transportproperties. In order to improve theoretical description of thermoelectrictransport in these compounds, we take into account electron scattering beyondcommonly used constant relaxation time approximation. Using first principlecalculations, we investigate the scattering of charge carriers by phonons andpoint defects. The dependence of the scattering rate on the energy correlateswith that for the total density of states. This implies that in this materialnot only the intraband, but also the interband scattering is important,especially for bands with low density of states. The Seebeck coefficient andthe electrical resistivity of CoSi and of dilute solid solutionsCo$_{1-x}$M$_x$Si (M=Fe or Ni, $x<0.1$) are calculated as a function oftemperature and the alloy composition. We show that the account of strongenergy dependence of relaxation time is important for the description ofexperimentally observed rapid increase of the resistivity and qualitativechange of its temperature dependence with the substitution of cobalt for iron,as well as for the description of the magnitude of the Seebeck coefficient, itstemperature and composition dependence.

The effect of energy-dependent electron scattering on thermoelectric transport in novel topological semimetal CoSi