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Understanding the spin dephasing mechanism is of fundamental importance inall potential applications of the spin qubit. Here we demonstrate a spindephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise.The spin-charge interaction is mediated by the interplay between the spin-orbitcoupling and the asymmetrical quantum dot confining potential. The dephasingrate is proportional to both the strength of the spin-orbit coupling and thedegree of the asymmetry of the confining potential. For parameters typical ofthe InSb, InAs, and GaAs quantum dots with a moderate well-height $V_{0}=10$meV, we find the spin dephasing times are ${\rm T}^{*}_{2}=7$ $\mu$s, $275$$\mu$s, and $55$ ms, respectively. In particular, the spin dephasing can beenhanced by lowering the well-height. When the well-height is as small as$V_{0}=5$ meV, the spin depahsing times in the InSb, InAs, and GaAs quantumdots are decreased to ${\rm T}^{*}_{2}=0.38$ $\mu$s, $18$ $\mu$s, and $9$ ms,respectively.

journal of physics. condensed matter

A spin dephasing mechanism mediated by the interplay between the  spin-orbit coupling and the asymmetrical confining potential in semiconductor  quantum dot