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We show Shubnikov-de Haas oscillations in topological insulator(Bi$_{x}$Sb$_{1-x}$)$_{2}$Te$_{3}$ films whose carrier type is p-type (x =0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berryphase, mobility, and the scattering time are significantly changed by tuningthe Fermi-level position with the concentration x. The Landau-level fan diagramin the sample with x = 0.42 showed the $\pi$ Berry phase and its mobility wasas high as 17,000 cm$^{2}$/V/s, whereas the others had the 2$\pi$ Berry phaseand much lower mobility. This suggests that because the bulk band of the samplewith x = 0.42 does not cross the Fermi level, it becomes bulk insulating,resulting in the topological surface-state dominating transport. Thus, we canswitch sample properties from degenerate to bulk insulating by tuning theconcentration x, which is consistent with results of angle-resolvedphotoemission spectroscopy.

Shubnikov-de Haas oscillations in p and n-type topological insulator (Bi$_{x}$Sb$_{1-x}$)$_{2}$Te$_{3}$