English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We calculate the thermal conductivity of free-standing silicene using thephonon Boltzmann transport equation within the relaxation time approximation.In this calculation, we investigate the effects of sample size and differentscattering mechanisms such as phonon-phonon, phonon-boundary, phonon-isotopeand phonon-vacancy defect. Moreover, the role of different phonon modes isexamined. We show that, in contrast to graphene, the dominant contribution tothe thermal conductivity of silicene originates from the in-plane acousticbranches, which is about 70\% at room temperature and this contribution becomeslarger by considering vacancy defects. Our results indicate that while thethermal conductivity of silicene is significantly suppressed by the vacancydefects, the effect of isotopes on the phononic transport is small. Ourcalculations demonstrate that by removing only one of every 400 silicon atoms,a substantial reduction of about 58\% in thermal conductivity is achieved.Furthermore, we find that the phonon-boundary scattering is important indefectless and small-size silicene samples, specially at low temperatures.

Phononic thermal conductivity in silicene: the role of vacancy defects and boundary scattering