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Two-dimensional structures that exhibit intriguing magnetic phenomena such asperpendicular magnetic anisotropy and switchable magnetization are of greatinterests in spintronics research. Herein, the density-functional theorystudies reveal the critical impacts of strain and external gating onvacancy-induced magnetism and its spin direction in a graphene-like singlelayer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO withan O-vacancy, the presence of a Zn-vacancy induces significant magnetic momentsto its first neighboring O and Zn atoms due to the charge deficit. We furtherpredict that the direction of magnetization easy axis reverses from an in-planeto perpendicular orientation under a practically achieved biaxial compressivestrain of $\sim$1--2\% or applying an electric-field by means of the chargedensity modulation. This magnetization reversal is driven by the strain- andelectric-field-induced changes in the spin-orbit coupled \emph{d} states of thefirst-neighbor Zn atom to the Zn-vacancy. These findings open interestingprospects for exploiting strain and electric-field engineering to manipulatemagnetism and magnetization orientation of two-dimensional materials.

Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating