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Microscopic features of carrier localization, minibands, and spectralcurrents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detectorstructures are studied and investigated in detail. In the presence of momentumand phase-relaxed elastic scattering processes, we show that a self-consistentnon-equilibrium Green's function method within the effective mass approximationcan be an effective tool to fairly predict the miniband and spectral transportproperties and their dependence on the design parameters such as layerthickness, superlattice periods, temperature, and built-in potential. Tobenchmark this model, we first evaluate the band properties of an infinite T2SLwith periodic boundary conditions, employing the envelope functionapproximation with a finite-difference discretization within the perturbativeeight-band $\bf{k.p}$ framework. The strong dependence of the constituentmaterial layer thicknesses on the band-edge positions and effective massesoffers a primary guideline to design performance-specific detectors for a widerange of operations. Moving forward, we demonstrate that using a finite T2SLstructure in the Green's function framework, one can estimate the bandgap,band-offsets, density of states, and spatial overlap which comply well with the$\bf{k.p}$ results and the experimental data. Finally, the superiority of thismethod is illustrated via a reasonable estimation of the band alignments inbarrier-based multi-color non-periodic complex T2SL structures. This study,therefore, provides deep physical insights into the carrier confinements inbroken-gap heterostructures and sets a perfect stage to perform transportcalculations in a full-quantum picture.

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors