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Stanene has been predicted to be a two-dimensional topological insulator(2DTI). Its low-buckled atomic geometry and the enhanced spin-orbit couplingare expected to cause a prominent quantum spin hall (QSH) effect. However, mostof the experimentally grown stanene to date displays a metallic state without areal gap, possibly due to the chemical coupling with the substrate and thestress applied by the substrate. Here,we demonstrate an efficient way of tuningthe atomic buckling in stanene to open a topologically nontrivial energy gap.Via tuning the growth kinetics, we obtain not only the low-buckled 1x1 stanenebut also an unexpected high-buckled R3xR3 stanene on the Bi(111) substrate.Scanning tunneling microscopy (STM) study combined with density functionaltheory (DFT) calculation confirms that the R3xR3 stanene is a distorted 1x1structure with a high-buckled Sn in every three 1x1 unit cells. Thehigh-buckled R3xR3 stanene favors a large band inversion at the {\Gamma} point,and the spin orbital coupling open a topologically nontrivial energy gap. Theexistence of edge states as verified in both STM measurement and DFTcalculation further confirms the topology of the R3xR3 stanene. This studyprovides an alternate way to tune the topology of monolayer 2DTI materials.

High-buckled R3 stanene with topologically nontrivial energy gap