English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Since the inevitability in experimental synthesis, defects show greatimportance to many materials. They will deeply regulate the properties of thematerials, and then affect the further applications. Thus, exploring theeffects of defects on the properties of materials is desired. Here, by usingfirst-principles calculations, we systematically studied the effect of siliconvacancy defects on the properties of silicene generated on Nterminated cubicboron nitride (111) surface. It is found that the introduction of siliconvacancy would trigger transition between half-metal and ferromagneticsemiconductor. With small vacancy ratios of 1/36 and 1/24, the ground-state ofthe samples would behave as ferromagnetic semiconductors, and the band gaps areabout 1.25 and 0.95 eV, respectively. When the vacancy ratio is increased up to1/6, the sample would turn into a ferromagnetic half-metal with a half-metallicgap of around 0.15 eV. The change of the electronic structure of the samples isdriven by the different electron transfer between silicon layer and substrate,i.e., there will be different amount of electrons transferred from the siliconlayer to the substrate when the vacancy ratio is altered. This work would opena new way to regulate the properties of materials and extend applications innanoelectronic field.

Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene