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High purity Ge (HPGe) is the key material for gamma ray detector production.Its high purity level (< 2x10^(-4) ppb of doping impurity) has to be preservedin the bulk during the processes needed to form the detector junctions. Withthe goal of improving the device performance and expanding the applicationfields, in this paper many alternative doping processes are evaluated, in orderto verify their effect on the purity of the material. In more detail, weinvestigated the electrical activation of contaminating doping defects orimpurities inside the bulk HPGe, induced by both conventional andnon-conventional surface doping processes, such as B ion implantation, P and Gadiffusion from Spin-On Doping (SOD) sources, Sb equilibrium diffusion from aremote sputtered source and laser thermal annealing (LTA) of sputtered Sb.Doping defects, thermally-activated during high temperature annealing, werecharacterized through electrical measurements. A phenomenological modeldescribing the contamination process was developed and used to analyze thediffusion parameters and possible process thermal windows. It resulted thatout-of-equilibrium doping processes confined to the HPGe surface have higherpossibilities to be successfully employed for the formation of thin contacts,maintaining the pristine purity of the bulk material. Among them, laser thermalannealing turned out to be the most promising.

Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium