English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We report on experimental studies of the effects induced by surface acousticwaves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. Weemploy stroboscopic optical excitation with either time-integrated ortime-resolved photoluminescence detection. In the absence of the acoustic wave,the emission spectra reveal signatures originated from the recombination ofneutral exciton and biexciton confined in the probed nanowire quantum dot. Whenthe nanowire is perturbed by the propagating acoustic wave, the embeddedquantum dot is periodically strained and its excitonic transitions aremodulated by the acousto-mechanical coupling. Depending on the recombinationlifetime of the involved optical transitions, we can resolve acousticallydriven radiative processes over time scales defined by the acoustic cycle. Athigh acoustic amplitudes, we also observe distortions in the transmittedacoustic waveform, which are reflected in the time-dependent spectral responseof our sensor quantum dot. In addition, the correlated intensity oscillationsobserved during temporal decay of the exciton and biexciton emission suggest aneffect of the acoustic piezoelectric fields on the quantum dot chargepopulation. The present results are relevant for the dynamic spectral andtemporal control of photon emission in III-nitride semiconductorheterostructures.

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures