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Herein we review the remarkable range of modifications to materialsproperties associated with photoexcitation of the growth surface duringphysical vapor epitaxy of semiconductors. We concentrate on mechanismsproducing measureable, utilizable changes in crystalline perfection, phase,composition, doping, and defect distribution. We outline the relevant physicsof different mechanisms, concentrating on those yielding effects orthogonal tothe primary growth variables of temperature and atomic or molecular fluxes anddocument the phenomenological effects reported. Based on experimentalobservations from a range of semiconductor systems and growth conditions, theprimary effects include enhanced anion desorption, molecular dissociation,increased doping efficiency, modification to defect populations andimprovements to the crystalline quality of epilayers grown at low temperatures.Future research directions and technological applications are also discussed.

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes