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We report on the insulator-to-metal transition in Se-hyperdoped Si layersdriven by manipulating the Se concentration via non-equilibrium materialprocessing, i.e. ion implantation followed by millisecond-flash lamp annealing.Electrical transport measurements reveal an increase of carrier concentrationand conductivity with increasing Se concentration. For the semi-insulatingsample with Se concentrations below the Mott limit, quantitative analysis ofthe temperature dependence of conductivity indicates a variable-range hoppingmechanism with an exponent of s = 1/2 rather than 1/4, which implies a Coulombgap at the Fermi level. The observed insulator-to-metal transition isattributed to the formation of an intermediate band in the Se-hyperdoped Silayers.

Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing