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The needs for efficient heat removal and superior thermal conduction innano/micro devices have triggered tremendous studies in low-dimensionalmaterials with high thermal conductivity. Hexagonal boron nitride (h-BN) isbelieved to be one of the candidates for thermal management and heatdissipation due to its novel physical properties, i.e. thermal conductor andelectrical insulator. Here we reported interfacial thermal resistance betweenfew-layer h-BN and its silicon oxide substrate using differential 3 omegamethod. The measured interfacial thermal resistance is around ~1.6*10-8 m2K/Wfor monolayer h-BN and ~3.4*10-8 m2K/W for 12.8nm-thick h-BN in metal/h-BN/SiO2interfaces. Our results suggest that the voids and gaps between substrate andthick h-BN flakes limit the interfacial thermal conduction. This work providesa deeper understanding of utilizing h-BN flake as lateral heat spreader inelectronic and optoelectronic nano/micro devices with further miniaturizationand integration.

Thermal conduction across a boron nitride and silicon oxide interface