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The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkablevariety of electronic behavior associated with the formation of an interfacialquasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of chargeon the top LaAlO3 surface, the LaAlO3/SrTiO3 interface conductance can becontrolled with near-atomic spatial resolution. Using this technique, asketch-based oxide nanotransistor (SketchFET) was demonstrated with a minimumfeature size of just two nanometers. Here we report direct measurements of thepotential barriers and electronic coupling between nanowire segments within aSketchFET device. Near room temperature, switching is governed by thermallyactivated field emission from the nanowire gate. Below T=150 K, a crossover toquantum field emission is observed that is sensitive to structural phasetransitions in the SrTiO3 layer. This direct measurement of the source-drainand gate-drain energy barriers is crucial for the development ofroom-temperature logic and memory elements and low-temperature quantum devices.

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor