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An effort is made to study the contrast in magnetic behavior resulting fromminimal disorder introduced by substitution of 2.5% Ga or Al in Mn-site ofLa${_{0.9}}$Sr$_{0.1}$MnO${_3}$. It is considered that Ga or Al selectivelycreates disorder within the orbital domains or on its walls, causingenhancement of Griffiths phase (GP) singularity for the former anddisappearance of it in the later case. It is shown that Ga replaces Mn$^{3+}$which is considered to be concentrated within the domains, whereas Al replacesMn$^{4+}$ which is segregated on the hole-rich walls, without causing anysignificant effect on structure or ferromagnetic transition temperatures. Thus,it is presumed that the effect of disorder created by Ga extend across the bulkof the domain having correlation over similar length-scale resulting inenhancement of GP phenomenon. On the contrary, effect of disorder created by Alremains restricted to the walls resulting in the modification of the dynamicsarising from the domain walls and suppresses the GP. Moreover contrastingfeatures are observed in the low temperature region of the compounds; are-entrant spin glass like behavior is observed in the Ga doped sample, whilethe observed characteristics for the Al doped sample is ascribed only tomodified domain wall dynamics with the absence of any glassy phase. Distinctivefeatures in third order susceptibility measurements reveals that the magneticground state of the entire series comprises of orbital domain states. Theseobservations bring out the role of the nature of disorder on GP phenomenon andalso reconfirms the character of self-organization in low-doped manganites.

Selective substitution in orbital domains of a low doped manganite : an investigation from Griffiths phenomenon and modification of glassy features