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The uniaxial structure of Si and Ge (001) facets leads to nontrivialtopological properties of steps and hence to interesting equilibrium phasetransitions. The disordered flat phase and the preroughening transition can bestabilized without the need for step-step interactions. A model describing thisis studied numerically by transfer matrix type finite-size-scaling of interfacefree energies. Its phase diagram contains a flat, rough, and disordered flatphase, separated by roughening and preroughening transition lines. Our estimatefor the location of the multicritical point where the preroughening line mergeswith the roughening line, predicts that Si and Ge (001) undergo prerougheninginduced simultaneous deconstruction transitions.Comment: 13 pages, RevTex, 7 Postscript Figures, submitted to J. Phys.

Preroughening transitions in a model for Si(001)- and Ge(001)-type crystal surfaces