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Active matrix flat-panel imagers (AMFPIs) offer many advantages and have become ubiquitous across a wide variety of medical x-ray imaging applications. However, for mammography, the imaging performance of conventional AMFPIs incorporating CsI:Tl scintillators or a-Se photoconductors is limited by their relatively modest signal-to-noise ratio (SNR), particularly at low x-ray exposures or high spatial resolution. One strategy for overcoming this limitation involves the use of a high gain photoconductor such as mercuric iodide (HgI(2)) which has the potential to improve the SNR by virtue of its low effective work function (W(EFF)). In this study, the performance of direct-detection AMFPI prototypes employing relatively thin layers of polycrystalline HgI(2) operated under mammographic irradiation conditions over a range of 0.5 to 16.0 mR is presented. High x-ray sensitivity (corresponding to W(EFF) values of ∼19 eV), low dark current (&lt;0.1 pA mm(-2)) and good spatial resolution, largely limited by the size of the pixel pitch, were observed. For one prototype, a detective quantum efficiency of ∼70% was observed at an x-ray exposure of ∼0.5 mR at 26 kVp.

Development of active matrix flat panel imagers incorporating thin layers of polycrystalline HgI2for mammographic x-ray imaging

Development of active matrix flat panel imagers incorporating thin layers of polycrystalline HgI₂for mammographic x-ray imaging