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The mechanical stability of commercial GaP/Si templates during thermalan-nealing and subsequent MOCVD growth of GaP and AlGaP isinvestigated.Although the GaP layer of the template originally presents anexcellent surfacemorphology, annealing at high enough temperatures to removethe native oxideprior to growth leads to plastic relaxation, accompanied by avariety of defects,including a dense grid of micro-twins. These micro-twinsdetrimentally affectGaP and AlGaP layers grown subsequently on the template.

Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates