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Taking into consideration of the phase transition of silicon, the threshold prediction model of the melting starting and completion and vaporization starting and completion irradiated by laser with pulse width from 400 fs to 1 ms and 1064 nm wavelength is established based on the results of temperature field. The laser-induced ablation threshold of silicon is measured experimentally. The variation tendency of the associated threshold of silicon with the laser pulse width is analyzed quantitatively by the heating depth model, which can predict the generation of periodic linear and circular ripples on silicon surface.

Effects of various pulse width laser with 1064 nm wavelength on thermal ablation and phase transition of monocrystalline silicon