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Solid electrolyte tantalum capacitors (Ta) are a major part of the passive electronic components industry. These capacitors are comprised of a sintered porous Ta powder compact on which a dielectric film of tantalum pentoxide (Ta2O5) is grown electrochemically. In most cases, a conducting MnO2 counter-electrode is applied by pyrolysis of an aqueous solution of Mn(NO3)2. Such capacitors have very high volumetric efficiency and excellent long-term stability. However, in certain applications, some of the tantalum properties are not required. This has led to the development of high efficiency ceramic capacitors and organic semiconductor aluminum capacitors that can substitute for Ta in some applications. Another potential substitute material is niobium (Nb), which has electrical and chemical properties similar to tantalum. Early attempts to use Nb failed because of an unstable niobium=niobium pentoxide (Nb2O5) interface [1], but recently two approaches to stabilization have been developed. One is based on the known effect of Ta nitriding, and the other takes advantage of the unique properties of niobium monoxide (NbO). This paper discusses the dynamics of the substrate=dielectric interface and shows how control of oxygen migration at the interface results in improved capacitor performance.

The Stabilization of Niobium-Based Solid Electrolyte Capacitors