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When increasing the RF power level in transistor oscillators to achieve better phase noise performance a reverse voltage breakdown of the base emitter junction of the oscillator transistor can occur. This results in increased phase noise and long term-transistor degradation. Common transistor simulation models/simulators do not have this effect included in their library, so the simulations fail to predict correct oscillator behavior. Starting from common oscillator topologies and active devices the critical waveforms were analyzed and related to the generated noise spectra. A theoretical explanation of the breakthrough process will be given, and the simulation models will be enhanced. Finally, recommendations are made how to avoid breakdown effects and the active device degradation in practical designs.

Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon