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This investigation examines the performance of AlGaN/GaN MISHEMTs having single-gate and dual-gate with different biasing combinations to explore the linearity in terms of g mpeak , gate voltage swing (GVS) and higher-order coefficients for intermodulation distortion for low-noise amplifiers (LNAs). In addition, the influence of distinct gate biasing configurations of DG-MISHEMT on current collapse (CC) (in response to OFF-state stress in drain) has been studied using TCAD simulations. It has been observed that drop in drain current value after the gate–drain voltages return to quiescent voltages (V GSQ , V DSQ ) reduces for DG-MISHEMT (when both the gates are shorted together) to 9.1% as compared with 19.4% for SG-MISHEMT. Besides, the CC phenomena for DG-MISHEMTs (for shorted gates) exhibit a slight increase from 9% to 11.8% when workfunction increases from 4.1   eV to 5.2   eV for gate G2. Further, linearity in terms of GVS is observed to be doubled for AlGaN/GaN DG-MISHEMTs with both the gates connected together as compared with device with screen gate G2 shorted to source. Additionally, radio frequency performance has been studied in terms of cut-off frequencies  fT  and  fmax  and minimum noise-figure NF min  for AlGaN/GaN SG-MISHEMT and DG-MISHEMTs for different gate to gate distance  i.e.,  L GG  =   100 and 200   nm. It is observed that NF min  is minimum for AlGaN/GaN DG-MISHEMT (with gate G1 floating and gate G2 is biased and L GG  =   100   nm)  i.e.,  1.13   dB with corresponding power gain of 18.7   dB at 50   GHz.

TCAD Investigation for Dual-Gate MISHEMT with Improved Linearity and Current Collapse for LNAs