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Intense light-matter interactions and unique structural and electricalproperties make Van der Waals heterostructures composed by Graphene (Gr) andmonolayer transition metal dichalcogenides (TMD) promising building blocks fortunnelling transistors, flexible electronics, as well as optoelectronicdevices, including photodetectors, photovoltaics and quantum light emittingdevices (QLEDs), bright and narrow-line emitters using minimal amounts ofactive absorber material. The performance of such devices is critically ruledby interlayer interactions which are still poorly understood in many respects.Specifically, two classes of coupling mechanisms have been proposed: chargetransfer (CT) and energy transfer (ET), but their relative efficiency and theunderlying physics is an open question. Here, building on a time resolved Ramanscattering experiment, we determine the electronic temperature profile of Gr inresponse to TMD photo-excitation, tracking the picosecond dynamics of the G and2D bands. Compelling evidence for a dominant role ET process accomplishedwithin a characteristic time of ~ 4 ps is provided. Our results suggest theexistence of an intermediate process between the observed picosecond ET and thegeneration of a net charge underlying the slower electric signals detected inoptoelectronic applications.

Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy