English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In complex oxide materials, changes in electronic properties are oftenassociated with changes in crystal structure, raising the question of therelative roles of the electronic and lattice effects in driving themetal-insulator transition. This paper presents a combined theoretical andexperimental analysis of the dependence of the metal-insulator transition ofNdNiO$_3$ on crystal structure, specifically comparing properties of bulkmaterials to one and two layer samples of NdNiO$_3$ grown between multipleelectronically inert NdAlO$_3$ counterlayers in a superlattice. The comparisonamplifies and validates a theoretical approach developed in previous papers anddisentangles the electronic and lattice contributions, through an independentvariation of each. In bulk NdNiO$_3$ the correlations are not strong enough todrive a metal-insulator transition by themselves: a lattice distortion isrequired. Ultra-thin films exhibit two additional electronic effects and onelattice-related effect. The electronic effects are quantum confinement, leadingto dimensional reduction of the electronic Hamiltonian, and an increase inelectronic bandwidth due to counterlayer induced bond angle changes. We findthat the confinement effect is much more important. The lattice effect is anincrease in stiffness due to the cost of propagation of the latticedisproportionation into the confining material.

Disentangling lattice and electronic contributions to the metal-insulator transition from bulk vs. layer confined RNiO$_3$