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Point defects in silicon carbide are rapidly becoming a platform of greatinterest for single photon generation, quantum sensing, and quantum informationscience. Photonic crystal cavities (PCC) can serve as an efficient light-matterinterface both to augment the defect emission and to aid in studying thedefects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-siliconcarbide with embedded silicon vacancy centers. These cavities are used toachieve Purcell enhancement of two closely spaced defect zero-phonon lines(ZPL). Enhancements of >80-fold are measured using multiple techniques.Additionally, the nature of the cavity coupling to the different ZPLs isexamined.

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center