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Studies of magnetization dynamics have incessantly facilitated the discoveryof fundamentally novel physical phenomena, making steady headway in thedevelopment of magnetic and spintronics devices. The dynamics can be inducedand detected electrically, offering new functionalities in advanced electronicsat the nanoscale. However, its scattering mechanism is still disputed.Understanding the mechanism in thin films is especially important, because mostspintronics devices are made from stacks of multilayers with nanometerthickness. The stacks are known to possess interfacial magnetic anisotropy, acentral property for applications, whose influence on the dynamics remainsunknown. Here, we investigate the impact of interfacial anisotropy by adoptingCoFeB/MgO as a model system. Through systematic and complementary measurementsof ferromagnetic resonance (FMR), on a series of thin films, we identifynarrower FMR linewidths at higher temperatures. We explicitly rule out thetemperature dependence of intrinsic damping as a possible cause, and it is alsonot expected from existing extrinsic scattering mechanisms for ferromagnets. Weascribe this observation to motional narrowing, an old concept so far neglectedin the analyses of FMR spectra. The effect is confirmed to originate frominterfacial anisotropy, impacting the practical technology of spin-basednanodevices up to room temperature.

Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy