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One-atom thick crystalline layers and their vertical heterostructures carrythe promise of designer electronic materials that are unattainable by standardgrowth techniques. In order to realize their potential it is necessary toisolate them from environmental disturbances in particular those introduced bythe substrate. But finding and characterizing suitable substrates, andminimizing the random potential fluctuations they introduce, has been apersistent challenge in this emerging field. Here we show that Landau-level(LL) spectroscopy is exquisitely sensitive to potential fluctuations on bothlocal and global length scales. Harnessing this technique we demonstrate thatthe insertion of an intermediate graphene layer provides superior screening ofsubstrate induced disturbances, more than doubling the electronic mean freepath. Furthermore, we find that the proximity of hBN acts as a nano-scalevacuum cleaner, dramatically suppressing the global potential fluctuations.This makes it possible to fabricate high quality devices on standard SiO2substrates.

Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy