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It is thought that strong electron correlation in an insulating parent phasewould enhance a critical temperature (Tc) of superconductivity in a doped phasevia enhancement of the binding energy of a Cooper pair as known in high-Tccuprates. To induce a superconductor transition in an insulating phase,injection of a high density of carriers is needed (e.g., by impurity doping).An electric double-layer transistor (EDLT) with an ionic liquid gate insulatorenables such a field-induced transition to be investigated and is expected toresult in a high Tc because it is free from deterioration in structure andcarrier transport that are in general caused by conventional carrier doping(e.g., chemical substitution). Here, for insulating epitaxial thin films (~10nm thick) of FeSe, we report a high Tc of 35 K, which is four times higher thanthat of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V.Hall effect measurements under the gate bias suggest that highly accumulatedelectron carrier in the channel, whose area density is estimated to be1.4x10^15 cm-2 (the average volume density of 1.7x10^21 cm-3), is the origin ofthe high-Tc superconductivity. This result demonstrates that EDLTs are usefultools to explore the ultimate Tc for insulating parent materials.

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K