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Lithographically fabricated MoS2 field effect transistors suffer from severalcritical imperfections, including low sub-threshold swings, large turn-on gatevoltages (VT), and wide device-to-device variability. The large magnitude andvariability of VT stems from unclean interfaces, trapped charges in theunderlying substrate, and sulfur vacancies created during the mechanicalexfoliation process. In this study, we demonstrate a simple and reliable oxygenplasma treatment, which mitigates the effects of unintentional doping createdby surface defect cites, such as S vacancies, and surface contamination. Thisplasma treatment restores charge neutrality to the MoS2 and shifts thethreshold turn-on voltage towards 0V. Out of the 8 devices measured, allexhibit a shift of the FET turn-on voltage from an average of -18.7V to -0.9V.The oxygen plasma treatment passivates these defects, which reduces surfacescattering, causing increased mobility and improved subthreshold swing. Foras-prepared devices with low mobilities (~0.01cm2/V.s), we observe up to a190-fold increase in mobility after exposure to the oxygen plasma. Perhaps themost important aspect of this oxygen plasma treatment is that it reduces thedevice-to-device variability, which is a crucial factor in realizing anypractical application of these devices.

Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment