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Temperature dependence of the dielectric function in the spectral range (0.5–8.5) eV of an In2O3 thin film
Author(s) -
Rüdiger SchmidtGrund,
HansReiner Krauss,
C. Kranert,
Michael Bonholzer,
Marius Grundmann
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4896321
Subject(s) - dielectric function , ellipsometry , thin film , dielectric , range (aeronautics) , condensed matter physics , materials science , atmospheric temperature range , phonon , chemistry , optoelectronics , physics , nanotechnology , meteorology , composite material
We present the dielectric function of a bcc-In2O3 thin film in the wide spectral range from near-infrared to vacuum-ultraviolet and for temperatures 10 K–300 K, determined by spectroscopic ellipsometry. From the temperature dependence of electronic transition energies, we derive electron-phonon coupling properties and found hints that the direct parabolic band-band transitions involve In-d states. Further we discuss possible excitonic contributions to the dielectric function.

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