English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

An attempt to reduce the SET voltage and RESET current of resistive switching (RS) memory was made using a geometric array of nanopeak (NP) structures. Bottoms of anodic porous alumina were used to form the NP structures that act as guides for the formation of conductive filaments that effectively concentrate the electric field. Samples were fabricated with flat surfaces (FS) and with two types of NP structure with different NP pitch. The NP samples provided SET voltages less than 2 V with narrow distributions and the RESET current was lower than that with the FS sample

Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory