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In a recent letter,1 it was reported that a magnetic tunnel transistor ~MTT! with a spin-valve base can exhibit high magnetocurrent ~MC! as well as output collector current in the microampere regime. While the presented experimental results are sound and unambiguous, the comparison with the spin-valve transistor ~SVT! is not. In this comment, we wish to address this by separately comparing the output current, transfer ratio, and MC of both devices

Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” [Appl. Phys. Lett. 83, 951 (2003)]