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Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents,were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD)technique. The Al2O3-BST films was demosnstrated to be a suitable systems tofabricate ferroelectric thin films with low dielectric loss and higher figureof merit for tunable microwave devices. Pure BST thin films were alsofabricated for comparison purpose. The films' structure and morphology wereanalyzed by X-ray diffractiopn and scanning electron microscopy, respectively;nad showed that the surface roughness for the Al2O3-BST films increased withthe Al2O3 content. Apart from that, the broadening in the intensity peak in XRDresult indicating the grain size of the Al2O3-BST films reduced with theincreasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BSTfilms with a home-made non-destructive dual resonator method at frequency ~ 7.7GHZ. The effect of doped Al2O3 into BST thin films significantly reduced thedielectric constant, dielectric loss and tunability compare to pure BST thinfilm. Our result shows the figure of merit (K), used to compare the films withvaried dielectric properties, increased with the Al2O3 content. ThereforeAl2O3-BST films show the potential to be exploited in tunable microwavedevices.Comment: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004  issue, Journal of Applied Physic

Improvement of dielectric loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices