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The relatively new technique of remote plasma enhanced chemical vapour deposition (RPECVD) of silicon nitride films is described. The influence of varying deposition parameters such as the ratios of reactant gases, pressure, temperature, and RF-power on the growth rate is described. Refractive index and amount of bonded hydrogen in the deposited films determined by IR attenuated total reflectance method are studied. The total concentration of bonded hydrogen in the deposited films was in the range 2 - 5 1022  cm-3. The damage to a gateless GaAs FET after remote plasma deposition of silicon nitride films is negligible

Remote plasma chemical vapour deposition of silicon nitride films